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Resonant Scattering by Realistic Impurities in Graphene

2010/03/31 by T. O. Wehling, Tim O. Wehling, S. Yuan +5 · 7 citations
Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Graphene research and applications #Surface and Thin Film Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevlett.105.056802

published as Phys. Rev. Lett. 105, 056802 (2010) · 4 pages, 4 figures

openalex publication_date 2010/07/27 · arxiv created 2010/07/29 · arxiv updated 2010/07/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We develop a first-principles theory of resonant impurities in graphene and show that a broad range of typical realistic impurities leads to the characteristic sublinear dependence of the conductivity on the carrier concentration. By means of density functional calculations various organic groups as well as adatoms such as H absorbed to graphene are shown to create midgap states within ±0.03 eV around the neutrality point. A low energy tight-binding description is mapped out. Boltzmann transport theory as well as a numerically exact Kubo formula approach yield the conductivity of graphene contaminated with these realistic impurities in accordance with recent experiments.

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