Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

2007/11/30 by E. H. Hwang, S. Das Sarma · 1 citation
Materials Science · Physics and Astronomy · #Charge-carrier density #Condensed matter physics #Coupling (piping) #Doping #Electron #Electron mobility #Graphene #Graphene research and applications #Materials science #Phonon #Phonon scattering #Physics #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Thermal properties of materials #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.77.115449

published as Phys. Rev. B 77, 115449 (2008) · 6 pages, 5 figures

arxiv created 2008/01/31 · openalex publication_date 2008/03/27 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We theoretically calculate the phonon scattering limited electron mobility in extrinsic (i.e., gated or doped with a tunable and finite carrier density) two-dimensional graphene layers as a function of temperature (T) and carrier density (n). We find a temperature-dependent phonon-limited resistivity \ensuremathρ_ph(T) to be linear in temperature for T\ensuremath\gtrsim50\phantom\rule0.3em0exK with the room-temperature intrinsic mobility reaching the values of above 10⁵\phantom\rule0.3em0excm²∕V\phantom\rule0.2em0exs. We comment on the low-temperature Bloch--Gr"uneisen behavior where \ensuremathρ_ph(T)\ensuremath∼T⁴ for unscreened electron-phonon coupling.

Citations

• Dielectric function, screening, and plasmons in two-dimensional graphene
• Transport in chemically doped graphene in the presence of adsorbed molecules
• Carrier Transport in Two-Dimensional Graphene Layers
• Voltage and temperature dependencies of conductivity in gated graphene
• Scattering mechanisms and Boltzmann transport in graphene
• Electric Field Effect in Atomically Thin Carbon Films
• Quantum Hall Ferromagnetism in Graphene

Cited by

• Path-Integral Approach to Quantum Acoustics

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