Scattering mechanisms and Boltzmann transport in graphene

2007/08/31 by Shaffique Adam, E. H. Hwang, S. Das Sarma · 2 citations
Materials Science · Physics and Astronomy · #Graphene research and applications #Quantum and electron transport phenomena #Surface and Thin Film Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1016/j.physe.2007.09.064

published as Physica E 40, 1022 (2008) · To be published in Physica E as EP2DS-17 conference proceedings

openalex publication_date 2007/09/23 · arxiv created 2007/10/09 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Different scattering mechanisms in graphene are explored and conductivity is calculated within the Boltzmann transport theory. We provide results for short-range scattering using the Random Phase Approximation for electron screening, as well as analytical expressions for the dependence of conductivity on the dielectric constant of the substrate. We further examine the effect of ripples on the transport using a surface roughness model developed for semiconductor heterostructures. We find that close to the Dirac point, σ∼ n^β, where β=1,0,-2 for Coulomb, short-range and surface roughness respectively; implying that Coulomb scattering dominates over both short-range and surface roughness scattering at low density.

Citations

• Atomic Structure of Graphene on SiO2

Cited by

• Unified description of the dc conductivity of monolayer and bilayer graphene at finite densities based on resonant scatterers
• Ground-state properties of gapped graphene using the random phase approximation