Ground-state properties of gapped graphene using the random phase approximation

2008/07/31 by Alireza Qaiumzadeh, Reza Asgari · 1 citation
Materials Science · Physics and Astronomy · #Band gap #Charge (physics) #Compressibility #Condensed matter physics #Conductance #Electron #Gapless playback #Graphene #Graphene research and applications #Ground state #Materials science #Phase (matter) #Physics #Quantum and electron transport phenomena #Quantum mechanics #Random phase approximation #Thermodynamics #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.79.075414

published as Phys. Rev. B 79, 075414 (2009) · 11 pages, Final version. To appear in Phys. Rev. B

arxiv created 2009/01/17 · openalex publication_date 2009/02/06 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We study the effect of band gap on the ground-state properties of Dirac electrons in a doped graphene within the random phase approximation at zero temperature. Band gap dependence of the exchange, correlation, and ground-state energies and the compressibility are calculated. In addition, we show that the conductance in the gapped graphene is smaller than gapless one. We also calculate the band-gap dependence of charge compressibility and it decreases with increasing the band-gap values.

Citations

• Dielectric function, screening, and plasmons in two-dimensional graphene
• Polarization charge distribution in gapped graphene: Perturbation theory and exact diagonalization analysis
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• Spin-Hall Insulator
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• Two-dimensional atomic crystals

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• Conductivity of graphene in the framework of Dirac model: Interplay between nonzero mass gap and chemical potential