2018/10/21 by V. T. Dolgopolov, V T Dolgopolov
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Coupling (piping) #Effective mass (spring–mass system) #Electron #Fermi gas #Fermi level #Metal #Quantum and electron transport phenomena #Semiconductor #Semiconductor materials and devices #Silicon #Transition metal #cond-mat.str-el
paper · pdf · doi:10.3367/ufne.2018.10.038449
published as Phys. Usp. 62, 633-648 (2019)
openalex publication_date 2018/10/21 · openalex created_date 2018/10/26 · arxiv created 2019/10/14 · arxiv updated 2019/10/15 · openalex updated_date 2026/08/05
Abstract Studies of various experimental groups that explore the properties of a two-dimensional electron gas in silicon semiconductor systems ((100) Si-MOSFET and (100) SiGe/Si/SiGe quantum wells) in the vicinity of the metal–insulator transition are described and critically analyzed. Results are identified that are common to all research: (i) the effective mass of electrons measured at the Fermi level in the metallic region increases as the electron density decreases and, if extrapolated, tends to diverge; (ii) the behavior of the energy-averaged mass in the metallic region is quite different in the two systems: in Si-MOSFETs, it also exhibits a tendency to diverge, while in the SiGe/Si/SiGe quantum wells it saturates in the limit of low electron densities; (iii) there is a small number (depending on the sample quality) of localized electrons in the metallic phase; (iv) the properties that the electron system exhibits in the insulating phase in the vicinity of the metal–insulator transition are typical of amorphous media with a strong coupling between particles.