2000/04/30 by V. M. Pudalov, G. Brunthaler, A. Prinz +1 · 4 citations
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Anisotropy #Chemistry #Condensed matter physics #Electron #Isotropy #Magnetic field #Magnetoresistance #Materials science #Optics #Perpendicular #Physics #Polarization (electrochemistry) #Quantum and electron transport phenomena #Quantum mechanics #Saturation (graph theory) #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.88.076401
published as Phys. Rev. Lett. v88, 076401 (2002) · 4 pages, 4 figures; New data added
arxiv created 2001/07/03 · openalex publication_date 2002/01/30 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D plane. The magnetoresistance is almost isotropic; this result does not support the suggestion of its orbital origin. In the hopping regime, however, the MR contains a weak anisotropic component that is nonmonotonic in the magnetic field. We found that the field, at which the MR saturates, varies for different samples by a factor of 2 at a given carrier density. Therefore, the saturation of the MR cannot be identified with the complete spin polarization of free carriers.