Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system

2021/06/30 by A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov +8
Engineering · Physics and Astronomy · #Condensed matter physics #Drop (telecommunication) #Electrical resistivity and conductivity #Electron #Fermi Gamma-ray Space Telescope #Fermi level #Magnetic field #Materials science #Metal #Metal–insulator transition #Physics #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Quantum mechanics #Semiconductor materials and devices #Spin (aerodynamics) #cond-mat.str-el

paper · pdf · doi:10.1038/s41598-022-09034-x

published as Sci. Rep. 12, 5080 (2022) · As published

arxiv created 2022/03/24 · openalex publication_date 2022/03/24 · arxiv updated 2022/03/25 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

The increase in the resistivity with decreasing temperature followed by a drop by more than one order of magnitude is observed on the metallic side near the zero-magnetic-field metal-insulator transition in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells. We find that the temperature T_max, at which the resistivity exhibits a maximum, is close to the renormalized Fermi temperature. However, rather than increasing along with the Fermi temperature, the value T_max decreases appreciably for spinless electrons in spin-polarizing (parallel) magnetic fields. The observed behaviour of T_max cannot be described by existing theories. The results indicate the spin-related origin of the effect.

Citations

• Metal–insulator transitions and the effects of electron–electron interactions in two-dimensional electron systems
• Metal–insulator transition in two-dimensional electron systems
• Small-Angle Shubnikov–de Haas Measurements in a 2D Electron System: The Effect of a Strong In-Plane Magnetic Field
• Metal-Insulator Transition in Disordered Two-Dimensional Electron Systems
• Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si-Inversion Layers
• Sharp increase of the effective mass near the critical density in a metallic two-dimensional electron system
• Формализованное описание основной структуры представления данных матричной универсальной объектно-реляционной базы данных
• Metal-Insulator Transition in a 2D Electron Gas: Equivalence of Two Approaches for Determining the Critical Point
• Thermodynamic spin magnetization of strongly correlated two-dimensional electrons in a silicon inversion layer
• Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells
• Molecular quantum materials: electronic phases and charge dynamics in two-dimensional organic solids