Manifestation of strong correlations in transport in ultraclean SiGe/Si/SiGe quantum wells

2020/04/30 by A. A. Shashkin, M. Yu. Melnikov, V. T. Dolgopolov +9 · 9 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Electrical resistivity and conductivity #Electron #Fermi gas #Fermi level #Insulator (electricity) #Line (geometry) #Materials science #Metal #Metal–insulator transition #Optoelectronics #Physics #Quantum #Quantum and electron transport phenomena #Quantum mechanics #Quantum well #Semiconductor materials and devices #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.102.081119

published in Physical review. B./Physical review. B 102(8) (American Physical Society)

arxiv created 2020/08/26 · openalex publication_date 2020/08/26 · arxiv updated 2021/05/03 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06

Abstract

We observe that in a strongly interacting two-dimensional electron system in ultraclean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a maximum at some temperature, and then decreases by more than one order of magnitude. We scale the resistivity data in line with expectations for the transport of strongly correlated Fermi systems and find a nearly perfect agreement with theory over a wide range of electron densities.

Citations

• Metal–insulator transitions and the effects of electron–electron interactions in two-dimensional electron systems
• Mott Transition from a Spin Liquid to a Fermi Liquid in the Spin-Frustrated Organic Conductorκ−(ET)2Cu2(CN)3
• Metal–insulator transition in two-dimensional electron systems
• Metal-Insulator Transition in Disordered Two-Dimensional Electron Systems
• Sharp increase of the effective mass near the critical density in a metallic two-dimensional electron system
• Metallic behavior and related phenomena in two dimensions
• Metal-Insulator Transition in a 2D Electron Gas: Equivalence of Two Approaches for Determining the Critical Point

Cited by

• Spin effect on the low-temperature resistivity maximum in a strongly interacting 2D electron system