2000/09/30 by A. A. Shashkin, S. V. Kravchenko, T. M. Klapwijk · 1 citation
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.87.266402
published as Phys. Rev. Lett. 87, 266402 (2001) · As published
arxiv created 2001/12/05 · openalex publication_date 2001/12/06 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The critical electron density for the metal-insulator transition in a two-dimensional electron gas can be determined by two distinct methods: (i) a sign change of the temperature derivative of the resistance, and (ii) vanishing activation energy and vanishing nonlinearity of current-voltage characteristics as extrapolated from the insulating side. We find that, in zero magnetic field (but not in the presence of a parallel magnetic field), both methods give equivalent results, adding support to the existence of a true zero-field metal-insulator transition.