Metallic Low-Temperature Resistivity in a 2D Electron System Over an Extended Temperature Range

1999/09/30 by S. V. Kravchenko, T. M. Klapwijk · 2 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.str-el

paper · pdf · doi:10.1103/physrevlett.84.2909

published as Phys. Rev. Lett. 84, 2909 (2000) · One reference corrected. To be published in PRL

arxiv created 2000/02/03 · openalex publication_date 2000/03/27 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We report measurements of the zero-field resistivity in a dilute 2D electron system in silicon at temperatures down to 35 mK. This extends the previously explored range of temperatures in this system by almost an order of magnitude. On the metallic side, the resistivity near the metal-insulator transition continues to decrease with decreasing temperature and shows no low-temperature upturn. At the critical electron density, the resistivity is found to be temperature independent in the entire temperature range from 35 mK to 1 K.

Citations

• Novel phenomena in dilute electron systems in two dimensions

Cited by

• Metal-Insulator Transition in a 2D Electron Gas: Equivalence of Two Approaches for Determining the Critical Point
• Metal–insulator transition in two-dimensional electron systems

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