1994/06/02 by S. V. Kravchenko, Kravchenko, S. V., Whitney Mason +11
Physics and Astronomy · #Advanced Thermodynamics and Statistical Mechanics #Condensed Matter (cond-mat) #FOS: Physical sciences #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #cond-mat
paper · pdf · doi:10.48550/arxiv.cond-mat/9406012
10 pages REVTeX v3.0; 4 POSTSCRIPT figures on request; OU-CO-94-0502
arxiv created 1994/06/02 · openalex publication_date 1994/06/02 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report the observation of TEMPERATURE-INDUCED transitions between insulator, metal, and quantum-Hall behaviors for transport coefficients in the very dilute high mobility two-dimensional electron system in silicon. We consider the ν=1 quantum Hall effect at the border of it's existence, at very low electron density. Our data show that as the temperature decreases, the extended states at ν=1 (above the Fermi level at higher temperature so that the system behaves as an insulator) sink below the Fermi energy, so that the quantum Hall effect occurs. As the extended states cross the Fermi level, the conductivity has a temperature dependence characteristic of a metallic system.