2005/12/28 by Yu. G. Arapov, С. В. Гудина, Arapov, Yu. G. +15
Engineering · Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Magnetic Field Sensors Techniques #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices
paper · pdf · doi:10.48550/arxiv.cond-mat/0512678
openalex publication_date 2005/12/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kTtau/hbar > 0.1 -- 3.5) for our samples, and the electron density is on a 'insulating' side of the so-called B = 0 2D metal--insulator transition. We show that the observed localization and Landau quantization is due to the Sigmaxy(T)anomalous T-dependence.