1998/09/25 by Nam‐Jung Kim, Nam-Jung Kim, Dragana Popovic +5
Physics and Astronomy · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Strongly Correlated Electrons (cond-mat.str-el) #Surface and Thin Film Phenomena #cond-mat.dis-nn #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.48550/arxiv.cond-mat/9809357
4 pages, revtex, plus six postscript figures
openalex publication_date 1998/09/25 · arxiv created 1999/05/03 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We explore the scaling description for a two-dimensional metal-insulator transition (MIT) of electrons in silicon. Near the MIT, βT/p = (-1/p)d(ln g)/d(ln T) is universal (with p, a sample dependent exponent, determined separately; g--conductance, T--temperature). We obtain the characteristic temperatures T0 and T1 demarking respectively the quantum critical region and the regime of validity of single parameter scaling in the metallic phase, and show that T1 vanishes as the transition is approached. For T<T1, the scaling of the data requires a second parameter. Moreover, all of the data can be described with two-parameter scaling at all densities -- even far from the transition.