2011/02/22 by Dragana Popović, Popović, Dragana · 1 citation
Engineering · Materials Science · #Disordered Systems and Neural Networks (cond-mat.dis-nn) #FOS: Physical sciences #Semiconductor materials and devices #Silicon Nanostructures and Photoluminescence #Strongly Correlated Electrons (cond-mat.str-el) #Thin-Film Transistor Technologies
paper · pdf · doi:10.48550/arxiv.1102.4586
openalex publication_date 2011/02/22 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
This review first describes the evidence that strongly suggests the existence of the metal-insulator transition (MIT) in a two-dimensional electron system in Si regardless of the amount of disorder. Extensive studies of the charge dynamics demonstrate that this transition is closely related to the glassy freezing of electrons as temperature T->0. Similarities to the behavior of three-dimensional materials raise the intriguing possibility that such correlated dynamics might be a universal feature of the MIT regardless of the dimensionality.