1999/12/27 by J. C. Flores, J.C. Flores, V. Bellani +5
Engineering · Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/9912457
REVTeX 3.0, 8 pages, 1 Postscript figure included
arxiv created 1999/12/27 · openalex publication_date 1999/12/27 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We introduce an elementary model for the electrostatic self-consistent potential in a two-dimensional electron gas. By considering the perpendicular degree of freedom arising from the electron tunneling out of the system plane, we predict a threshold carrier density above which this effect is relevant. The predicted value agrees remarkably well with the onset for the insulator to quasi-metallic transition recently observed in several experiments in SiO2-Si and AlGaAs-GaAs heterojunctions.