2000/07/31 by A. A. Shashkin, S. V. Kravchenko, V. T. Dolgopolov +1 · 5 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.mes-hall #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.87.086801
published as Phys. Rev. Lett. 87, 086801 (2001) · 4 pages, postscript figures included. Revised version
arxiv created 2001/05/06 · openalex publication_date 2001/08/03 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01
The magnetic field B(c), in which the electrons become fully spin polarized, is found to be proportional to the deviation of the electron density from the zero-field metal-insulator transition in a two-dimensional electron system in silicon. The tendency of B(c) to vanish at a finite electron density suggests a ferromagnetic instability in this strongly correlated electron system.