2000/04/20 by Sergey Vitkalov, Sergey A. Vitkalov, Hairong Zheng +3 · 6 citations
Chemistry · Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Chemistry #Condensed matter physics #Electron #Fermi surface #Magnetic field #Optics #Physics #Plane (geometry) #Polarization (electrochemistry) #Quantum and electron transport phenomena #Quantum mechanics #Quantum oscillations #Scattering #Semiconductor materials and devices #Shubnikov–de Haas effect #Spin (aerodynamics) #Spin polarization #Superconductivity #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.85.2164
4 pages; figures now inserted in text; additional reference
arxiv created 2000/04/20 · openalex publication_date 2000/09/04 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
Measurements in magnetic fields applied at small angles relative to the electron plane in silicon MOSFETs indicate a factor of 2 increase of the frequency of Shubnikov-de Haas oscillations at H>H(sat). This signals the onset of full spin polarization above H(sat), the parallel field above which the resistivity saturates to a constant value. For H<H(sat), the phase of the second harmonic of the oscillations relative to the first is consistent with scattering events that depend on the overlap instead of the sum of the spin-up and spin-down densities of states. This unusual behavior may reflect the importance of many-body interactions.