2001/05/31 by M. P. Sarachik
Engineering · Mathematics · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Boundary (topology) #Condensed matter physics #Electron #Electron density #Function (biology) #Limit (mathematics) #Materials science #Mathematical analysis #Mathematics #Phase (matter) #Phase boundary #Physics #Power law #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Semiconductor Quantum Structures and Devices #cond-mat.str-el
paper · pdf · doi:10.1209/epl/i2002-00496-6
2 pages, 1 figure
arxiv created 2001/05/31 · openalex publication_date 2002/02/01 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
For five different electron and hole systems in two dimensions (Si MOSFETs, p-GaAs, p-SiGe, n-GaAs and n-AlAs), the critical density n c that marks the onset of strong localization is shown to be a single power law function of the scattering rate 1/τ deduced from the maximum mobility. The resulting curve defines the boundary separating a localized phase from a phase that exhibits metallic behavior. The critical density n c → 0 in the limit of infinite mobility.