2014/12/31 by Ping Lin, Ping V. Lin, Dragana Popović
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Coulomb #Critical exponent #Electrical resistivity and conductivity #Electron #Materials science #Metal–insulator transition #Phase transition #Physics #Quantum and electron transport phenomena #Quantum mechanics #Range (aeronautics) #Scaling #Semiconductor materials and devices #Strongly correlated material #cond-mat.dis-nn #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.114.166401
published as Phys. Rev. Lett. 114, 166401 (2015) · 5 pages, 4 figures, 1 Table; published version
openalex publication_date 2015/04/20 · arxiv created 2015/05/04 · arxiv updated 2015/05/06 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
A study of the temperature (T) and density (ns) dependence of conductivity σ(ns,T) of a highly disordered, two-dimensional (2D) electron system in Si demonstrates scaling behavior consistent with the existence of a metal-insulator transition (MIT). The same critical exponents are found when the Coulomb interaction is screened by the metallic gate and when it is unscreened or long range. The results strongly suggest the existence of a disorder-dominated 2D MIT, which is not directly affected by the range of the Coulomb interactions.