1999/02/28 by Xiao Feng, X. G. Feng, Dragana Popović +2 · 1 citation
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Conductivity #Local density of states #Magnetic moment #Materials science #Metal #Optics #Phase (matter) #Physics #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Semiconductor Quantum Structures and Devices #Sigma #Substrate (aquarium) #cond-mat.dis-nn #cond-mat.str-el
paper · pdf · doi:10.1103/physrevlett.83.368
published as Phys. Rev. Lett. 83, 368 (1999) · 4 pages, revtex, plus four encapsulated postscript figures
arxiv created 1999/03/30 · openalex publication_date 1999/07/12 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
The temperature dependence of conductivity \ensuremathσ(T) in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by disorder, and their number was varied using substrate bias. The data suggest that in the limit of T\ensuremath→0 the metallic behavior, as characterized by d\ensuremathσ/dT<0, is suppressed by an arbitrarily small amount of scattering by local magnetic moments.