Effect of screening long-range Coulomb interactions on the metallic behavior in two-dimensional hole systems

2008/04/25 by L. H. Ho, W. R. Clarke, A. P. Micolich +6 · 15 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Chemical physics #Composite material #Condensed matter physics #Coulomb #Electron #Materials science #Metal #Metallurgy #Physics #Quantum and electron transport phenomena #Quantum mechanics #Range (aeronautics) #Surface and Thin Film Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.77.201402

published in Physical Review B 77(20) (American Physical Society) · 5 pages, 4 figures, accepted for publication in PRB

arxiv created 2008/04/25 · openalex publication_date 2008/05/13 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

We have developed a technique utilizing a double quantum well heterostructure that allows us to study the effect of a nearby ground plane on the metallic behavior in a GaAs two-dimensional hole system (2DHS) in a single sample and measurement cooldown, thereby maintaining a constant disorder potential. In contrast to recent measurements of the effect of ground-plane screening of the long-range Coulomb interaction in the insulating regime, we find surprisingly little effect on the metallic behavior when we change the distance between the 2DHS and the nearby ground plane.

Citations

• Calculated temperature-dependent resistance in low-density two-dimensional hole gases in GaAs heterostructures
• Thermodynamic Density of States of Two-Dimensional GaAs Systems near the Apparent Metal-Insulator Transition
• Metal–insulator transition in two-dimensional electron systems

Cited by

• Velocity-modulation control of electron-wave propagation in graphene
• Critical Behavior of a Strongly Disordered 2D Electron System: The Cases of Long-Range and Screened Coulomb Interactions