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Calculated temperature-dependent resistance in low-density two-dimensional hole gases in GaAs heterostructures

2000/01/05 by S. Das Sarma, E. H. Hwang
Physics and Astronomy · #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #cond-mat.str-el

paper · pdf · doi:10.1103/physrevb.61.r7838

published as Phys. Rev. B 61, R7838 (2000) · 4 pages, 3 figures

arxiv created 2000/01/05 · openalex publication_date 2000/03/15 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

We calculate the low temperature resistivity in low-density two-dimensional hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature-dependent nonmonotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data.

Citations