Critical behaviour of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFETs

2001/03/13 by R. Fletcher, V. M. Pudalov, A. D. B. Radcliffe +2
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Quantum and electron transport phenomena #Semiconductor materials and devices #cond-mat.str-el

paper · pdf · doi:10.1088/0268-1242/16/5/318

published as Semicond. Sci.Technol. v16, 386 (2001) · Extended version of the preprint cond-mat/0002436; 21 pages, 6 figures

arxiv created 2001/03/13 · openalex publication_date 2001/04/12 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/30

Abstract

This paper reports thermopower and conductivity measurements through the metal-insulator transition for two-dimensional electron gases in high-mobility Si-MOSFETs. At low temperatures both thermopower and conductivity show critical behaviour as functions of the electron density. When approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductivity vanishes. On the insulating side the thermopower shows an upturn with decreasing temperature. These features have much in common with those expected for an Anderson transition.

Citations

• Conduction in non-crystalline materials
• Interactions and scaling in a disordered two-dimensional metal
• Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions