2002/04/25 by S. A. Vitkalov, Sergey Vitkalov, Kurt James +4 · 62 citations
Engineering · Physics and Astronomy · #Advancements in Semiconductor Devices and Circuit Design #Condensed matter physics #Conductivity #Electron #Electron scattering #Magnetic field #Physics #Quantum and electron transport phenomena #Quantum mechanics #Scattering #Semiconductor Quantum Structures and Devices #Silicon #Thermal conduction #cond-mat.str-el
paper · pdf · doi:10.1103/physrevb.67.113310
published in Physical review. B, Condensed matter 67(11) (American Physical Society)
arxiv created 2002/04/25 · openalex publication_date 2003/03/19 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05
For densities above n=1.6\ifmmode×\else\texttimes\fi1011cm^\ensuremath-2 in the strongly interacting system of electrons in two-dimensional silicon inversion layers, excellent agreement between experiment and the theory of Zala, Narozhny, and Aleiner is obtained for the response of the conductivity to a magnetic field applied parallel to the plane of the electrons. The parameters deduced from fits to the magnetoconductance do not provide quantitative agreement with the observed zero-field temperature dependence. We attribute this to the neglect in the theory of additional scattering terms, which affect the temperature dependence more strongly than the field dependence.