2013/06/21 by T. Moriyama, K. Nagashio, Kosuke Nagashio +4
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Chemistry #Contact resistance #Electrical engineering #Electrode #Field-effect transistor #Graphene #Graphene foam #Graphene nanoribbons #Graphene oxide paper #Graphene research and applications #Layer (electronics) #Materials science #Metal #Metallurgy #Modulation (music) #Molecular Junctions and Nanostructures #Nanotechnology #Optoelectronics #Resist #Transistor #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.4813216
published as J. Appl. Phys. 2013 114, 024503 · will be published in JAP 2013
arxiv created 2013/06/21 · openalex publication_date 2013/07/11 · arxiv updated 2015/06/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We investigate the transport properties of graphene underneath metal to reveal whether the carrier density in graphene underneath source/drain electrodes in graphene field-effect transistors is fixed. The resistance of the graphene/Ni double-layered structure has shown a graphene-like back-gate bias dependence. In other words, the electrical properties of graphene are not significantly affected by its contact with Ni. This unexpected result may be ascribed to resist residuals at the metal/graphene interface, which may reduce the interaction between graphene and metals. In a back-gate device fabricated using the conventional lithography technique with an organic resist, the carrier density modulation in the graphene underneath the metal electrodes should be considered when discussing the metal/graphene contact.