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Electronic properties of Au-graphene contacts

2011/07/21 by C. E. Malec, Dragomir Davidović, D. Davidović · 1 citation
Engineering · Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Composite material #Condensed matter physics #Contact resistance #Dielectric #Doping #Electron #Fermi level #Graphene #Graphene nanoribbons #Graphene research and applications #Layer (electronics) #Low-power high-performance VLSI design #Materials science #Nanotechnology #Non-equilibrium thermodynamics #Optoelectronics #Oxide #Physics #Quantum tunnelling #Thermal conduction #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.84.033407

published as Phys. Rev. B 84, 033407 (2011) · 11 pages, 4 figures

openalex publication_date 2011/07/21 · arxiv created 2011/08/16 · arxiv updated 2011/08/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

The effects of Au grains on graphene conduction and doping are investigated. To obtain a clean Au-graphene contact, Au grains are deposited over graphene before any chemical processing. The bulk and the effective contact resistance versus gate voltage demonstrate that Au grains cause p-doping in graphene. The Fermi level shift is in disagreement with published first-principles calculations, with larger than predicted separation between the graphene and the topmost Au layer. The differential resistance versus bias voltage display anomalies at zero bias and at higher voltages, the latter likely caused by inelastic tunneling across the Au-graphene interface.

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