2008/12/31 by Z. Klusek, Klusek, Z., P. Dąbrowski +13
Materials Science · Physics and Astronomy · #Chemical and Physical Properties of Materials #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Surface and Thin Film Phenomena
paper · pdf · doi:10.48550/arxiv.0901.0070
openalex publication_date 2008/12/31 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive Au/Cr/SiO2/Si substrate shows that gold substrate causes the Fermi level shift downwards which means that holes are donated by metal substrate to graphene which becomes p-type doped. These experimental results are in good accordance with recently published density function theory calculations. The estimated positions of the Dirac point show that the higher number of graphene layers the lower Fermi level shift is observed.