2007/01/24 by Zhihong Chen, Yu-Ming Lin, M. J. Rooks +2 · 8 citations
Engineering · Materials Science · Physics and Astronomy · #Composite material #Condensed matter physics #Electrical engineering #Electrical resistivity and conductivity #Engineering #Enhanced Data Rates for GSM Evolution #Field-effect transistor #Graphene #Graphene nanoribbons #Graphene research and applications #Materials science #Molecular Junctions and Nanostructures #Nano- #Nanotechnology #Noise (video) #Optoelectronics #Physics #Quantum and electron transport phenomena #Ribbon #Transistor #Voltage #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1016/j.physe.2007.06.020
published as Physica E: Low-dimensional Systems and Nanostructures, Vol. 40/2, pp 228-232 (2007) · 6 pages, 7 figures
arxiv created 2007/01/24 · openalex publication_date 2007/06/18 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise.