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Resistivity of Graphene Nanoribbon Interconnects

2009/05/27 by Raghunath Murali, Kevin Brenner, Yinxiao Yang +3 · 1 citation
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Carbon Nanotubes in Composites #Chemistry #Condensed matter physics #Conductivity #Electrical resistivity and conductivity #Graphene #Graphene nanoribbons #Graphene research and applications #Impurity #Materials science #Nanotechnology #Nanowire #Optics #Optoelectronics #Physics #Scattering #Substrate (aquarium) #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1109/led.2009.2020182

10 pages, 3 figures, to be published in IEEE Electron Device Letters

openalex publication_date 2009/05/27 · arxiv created 2009/06/04 · arxiv updated 2015/05/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Graphene nanoribbon interconnects are fabricated, and the extracted resistivity is compared to that of Cu. It is found that the average resistivity at a given line-width (18nm<W<52nm) is about 3X that of a Cu wire, whereas the best GNR has a resistivity comparable to that of Cu. The conductivity is found to be limited by impurity scattering as well as LER scattering; as a result, the best reported GNR resistivity is 3X the limit imposed by substrate phonon scattering. This study reveals that even moderate-quality graphene nanowires have the potential to outperform Cu for use as on-chip interconnects.

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