2009/06/11 by D. M. Basko, S. Piscanec, Andrea C. Ferrari +1 · 7 citations
Materials Science · Physics and Astronomy · #Atomic physics #Condensed matter physics #Diamond and Carbon-based Materials Research #Doping #Electron #Graphene #Graphene research and applications #Materials science #Optics #Phonon #Physics #Quantum and electron transport phenomena #Quantum mechanics #Raman scattering #Raman spectroscopy #X-ray Raman scattering #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1103/physrevb.80.165413
published as Phys. Rev. B 80, 165413 (2009) · Refs added, typos corrected, submitted to PRB
arxiv created 2009/06/11 · openalex publication_date 2009/10/16 · arxiv updated 2015/05/13 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Raman spectroscopy is a fast and nondestructive means to characterize graphene samples. In particular, the Raman spectra are strongly affected by doping. While the resulting change in position and width of the G peak can be explained by the nonadiabatic Kohn anomaly at \ensuremathΓ, the significant doping dependence of the 2D peak intensity has not been understood yet. Here we show that this is due to a combination of electron-phonon and electron-electron scattering. Under full resonance, the photogenerated electron-hole pairs can scatter not just with phonons but also with doping-induced electrons or holes, and this changes the intensity. We explain the doping dependence and show how it can be used to determine the corresponding electron-phonon coupling. This is higher than predicted by density-functional theory, as a consequence of renormalization by Coulomb interactions.