2008/01/28 by Yuhan Wang, Yingying Wang, Zhenhua Ni +3
Engineering · Materials Science · Physics and Astronomy · #Graphene research and applications #Nonlinear Optical Materials Studies #Plasmonic and Surface Plasmon Research #cond-mat.mtrl-sci
paper · pdf · doi:10.1063/1.2838745
published as Applied Physics Letters 92, 043121 2008 · 13 pages, 3 figures to be published in Applied Physics Letters
openalex publication_date 2008/01/28 · arxiv created 2008/01/30 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Raman spectroscopic studies of graphene have attracted much interest. The G-band Raman intensity of a single layer graphene on Si substrate with 300nm SiO2 capping layer is surprisingly strong and is comparable to that of bulk graphite. To explain this Raman intensity anomaly, we show that in addition to the interference due to multiple reflection of the incident laser, the multiple reflection of the Raman signal inside the graphene layer must be also accounted for. Further studies of the role of SiO2 layer in the enhancement Raman signal of graphene are carried out and an enhancement factor of ∼30 is achievable, which is very significant for the Raman studies. Finally, we discuss the potential application of this enhancement effect on other ultrathin films and nanoflakes and a general selection criterion of capping layer and substrate is given.