Inelastic carrier lifetime in graphene

2006/12/31 by E. H. Hwang, Ben Yu-Kuang Hu, S. Das Sarma · 4 citations
Engineering · Materials Science · Physics and Astronomy · #Graphene research and applications #Semiconductor materials and devices #Surface and Thin Film Phenomena #cond-mat.mes-hall

paper · pdf · doi:10.1103/physrevb.76.115434

published as Phys. Rev. B 76, 115434 (2007) · 6 pages, 5 figures

openalex publication_date 2007/09/26 · arxiv created 2007/12/03 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We consider hot-carrier inelastic scattering due to electron-electron interactions in graphene as functions of carrier energy and density. We calculate the imaginary part of the zero-temperature quasiparticle self-energy for doped graphene utilizing the G₀W and random phases approximations. Using the full dynamically screened Coulomb interaction, we obtain the inelastic quasiparticle lifetimes and associated mean free paths. The linear dispersion of graphene gives lifetime energy dependences that are qualitatively different from those of parabolic-band semiconductors. We also get good agreement with data from angle-resolved photoemission spectroscopy experiments.

Citations

• Electric Field Effect in Atomically Thin Carbon Films
• Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics

Cited by

• Plasmons and the spectral function of graphene
• Effect of electron-electron interaction on the Fermi surface topology of doped graphene
• Quasiparticle properties of graphene in the presence of disorder
• Unconventional Quasiparticle Lifetime in Graphene