2008/11/05 by Christoph Stampfer, C. Stampfer, J. Güttinger +7 · 5 citations
Materials Science · Physics and Astronomy · #Carbon Nanotubes in Composites #Condensed matter physics #Conductance #Density of states #Electron #Energy (signal processing) #Graphene #Graphene nanoribbons #Graphene research and applications #Materials science #Nanotechnology #Physics #Quantum and electron transport phenomena #Ribbon #Transistor #Voltage #cond-mat.dis-nn #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevlett.102.056403
published as Phys. Rev. Lett. 102, 056403 (2009) · 5 pages, 5 figures
arxiv created 2008/11/05 · openalex publication_date 2009/02/03 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Transport measurements on an etched graphene nanoribbon are presented. It is shown that two distinct voltage scales can be experimentally extracted that characterize the parameter region of suppressed conductance at low charge density in the ribbon. One of them is related to the charging energy of localized states, the other to the strength of the disorder potential. The lever arms of gates vary by up to 30% for different localized states which must therefore be spread in position along the ribbon. A single-electron transistor is used to prove the addition of individual electrons to the localized states. In our sample the characteristic charging energy is of the order of 10 meV, the characteristic strength of the disorder potential of the order of 100 meV.