2008/11/18 by Sunmin Ryu, Melinda Y. Han, Melinda Han +5 · 7 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #2D Materials and Applications #Advancements in Battery Materials #Basal plane #Chemical physics #Chemistry #Crystallography #Dehydrogenation #Dissociation (chemistry) #Graphene #Graphene nanoribbons #Graphene oxide paper #Graphene research and applications #Hydrogen #Hydrogen silsesquioxane #Layer (electronics) #Materials science #Nanotechnology #Organic chemistry #Photochemistry #Physical chemistry #Raman spectroscopy #cond-mat.mtrl-sci
paper · pdf · doi:10.1021/nl802940s
published as Nano Lett. 8, 4597 (2008) · Main text: 14 pages with 6 figures, supporting information: 4 pages with 4 figures;Nano Letters, Articles ASAP (2008)
openalex publication_date 2008/11/18 · arxiv created 2008/11/19 · arxiv updated 2010/11/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report the chemical reaction of single-layer graphene with hydrogen atoms, generated in situ by electron-induced dissociation of hydrogen silsesquioxane (HSQ). Hydrogenation, forming sp3 C--H functionality on the basal plane of graphene, proceeds at a higher rate for single than for double layers, demonstrating the enhanced chemical reactivity of single sheet graphene. The net H atom sticking probability on single layers at 300 K is at least 0.03, which exceeds that of double layers by at least a factor of 15. Chemisorbed hydrogen atoms, which give rise to a prominent Raman D band, can be detached by thermal annealing at 100-200 degrees C. The resulting dehydrogenated graphene is "activated" when photothermally heated it reversibly binds ambient oxygen, leading to hole doping of the graphene. This functionalization of graphene can be exploited to manipulate electronic and charge transport properties of graphene devices.