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Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping

2008/06/19 by Li Liu, Sunmin Ryu, Michelle Tomasik +7 · 3 citations
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Chemical engineering #Chemical physics #Chemistry #Composite material #Etching (microfabrication) #Fermi level #Graphene #Graphene and Nanomaterials Applications #Graphene nanoribbons #Graphene oxide paper #Graphene research and applications #Graphite #Graphite oxide #Layer (electronics) #Materials science #Nanotechnology #Nucleation #Organic chemistry #Oxide #Oxygen #cond-mat.mtrl-sci

paper · pdf · doi:10.1021/nl0808684

published as Nano Lett. 8, 1965 (2008) · 15 pages, 5 figures

openalex publication_date 2008/06/19 · arxiv created 2008/07/02 · arxiv updated 2010/11/16 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

Patterned graphene shows substantial potential for applications in future molecular-scale integrated electronics. Environmental effects are a critical issue in a single-layer material where every atom is on the surface. Especially intriguing is the variety of rich chemical interactions shown by molecular oxygen with aromatic molecules. We find that O 2 etching kinetics vary strongly with the number of graphene layers in the sample. Three-layer-thick samples show etching similar to bulk natural graphite. Single-layer graphene reacts faster and shows random etch pits in contrast to natural graphite where nucleation occurs at point defects. In addition, basal plane oxygen species strongly hole dope graphene, with a Fermi level shift of approximately 0.5 eV. These oxygen species desorb partially in an Ar gas flow, or under irradiation by far UV light, and readsorb again in an O 2 atmosphere at room temperature. This strongly doped graphene is very different from "graphene oxide" made by mineral acid attack.

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