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Modulation of the thermodynamic, kinetic, and magnetic properties of the hydrogen monomer on graphene by charge doping

2010/11/16 by Liang‐Feng Huang, Liang Feng Huang, Mei Ni +9
Chemistry · Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Chemical physics #Chemistry #Condensed matter physics #Doping #Graphene #Graphene nanoribbons #Graphene research and applications #Hydrogen #Hydrogen Storage and Materials #Magnetic moment #Materials science #Nanotechnology #Optoelectronics #Organic chemistry #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.3624657

published as J. Chem. Phys. 135, 064705 (2011) · Submitted

arxiv created 2010/11/16 · openalex publication_date 2011/08/11 · arxiv updated 2011/08/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

The thermodynamic, kinetic, and magnetic properties of the hydrogen monomer on doped graphene layers were studied by ab initio simulations. Electron doping heightens the diffusion potential barrier, while hole doping lowers it. However, both kinds of dopings heighten the desorption potential barrier. The underlying mechanism was revealed by investigating the effect of charge doping on the bond strength of graphene and on the electron transfer and the coulomb interaction between the hydrogen monomer and graphene. The kinetic properties of H and D monomers on doped graphene layers during both the annealing process (annealing time t(0) = 300 s) and the constant-rate heating process (heating rate α = 1.0 K/s) were simulated. Macroscopic diffusion of hydrogen monomers on graphene can be achieved when the doping-hole density reaches 5.0 × 10(13) cm(-2). Both electron and hole dopings linearly reduce the total magnetic moment and exchange splitting, which was explained by a simple exchange model. The laws found in this work had been generalized to explain many phenomena reported in literature. This study can further enhance the understanding of the interaction between hydrogen and graphene and was expected to be helpful in the design of hydrogenated-graphene-based devices.

Citations