Electronic doping and scattering by transition metals on graphene

2009/03/31 by K. Pi, K. M. McCreary, Kathleen M. McCreary +11 · 3 citations
Engineering · Materials Science · Physics and Astronomy · #Advancements in Battery Materials #Graphene research and applications #Quantum and electron transport phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.80.075406

published as Phys. Rev. B 80, 075406 (2009) · v2: revised text, additional data and analysis To appear in Phys. Rev. B

arxiv created 2009/06/30 · openalex publication_date 2009/08/05 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

We investigate the effects of transition metals (TM) on the electronic doping and scattering in graphene using molecular-beam epitaxy combined with in situ transport measurements. The room-temperature deposition of TM onto graphene produces clusters that dope n type for all TM investigated (Ti, Fe, and Pt). We also find that the scattering by TM clusters exhibits different behavior compared to 1/r Coulomb scattering. At high coverage, Pt films are able to produce doping that is either n type or weakly p type, which provides experimental evidence for a strong interfacial dipole favoring n-type doping as predicted theoretically.

Citations

• Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
• Detection of individual gas molecules adsorbed on graphene
• Atomic Structure of Graphene on SiO2

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