High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

2012/06/14 by Hui Fang, Steven S.C. Chuang, Steven Chuang +4 · 10 citations
Chemistry · Materials Science · Physics and Astronomy · #2D Materials and Applications #Adsorption #Chemisorption #Chemistry #Contact resistance #Dielectric #Doping #Electrical engineering #Electron mobility #Field-effect transistor #Graphene research and applications #Layer (electronics) #MXene and MAX Phase Materials #Materials science #Monolayer #Nanotechnology #Optoelectronics #Transistor #Transition metal #Tungsten diselenide #Voltage #Work function #cond-mat.mes-hall

paper · pdf · doi:10.1021/nl301702r

openalex publication_date 2012/06/14 · arxiv created 2012/06/21 · arxiv updated 2012/06/22 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We report high performance p-type field-effect transistors based on single layered (thickness, ∼0.7 nm) WSe(2) as the active channel with chemically doped source/drain contacts and high-κ gate dielectrics. The top-gated monolayer transistors exhibit a high effective hole mobility of ∼250 cm(2)/(V s), perfect subthreshold swing of ∼60 mV/dec, and I(ON)/I(OFF) of >10(6) at room temperature. Special attention is given to lowering the contact resistance for hole injection by using high work function Pd contacts along with degenerate surface doping of the contacts by patterned NO(2) chemisorption on WSe(2). The results here present a promising material system and device architecture for p-type monolayer transistors with excellent characteristics.

Citations

• High-mobility field-effect transistors based on transition metal dichalcogenides
• Single-layer MoS2 transistors
• Detection of individual gas molecules adsorbed on graphene

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