WSe2 p-MOSFETs with Nb-Doped WS2 Contacts Deposited using Atomic Layer Deposition

2025/11/24 by Mishra, Shivanshu, Li, Ruixue, Seo, Dongjea +5
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.2511.18778

Abstract

WSe2 p-MOSFETs with Nb-doped WS2 contacts formed using atomic layer deposition are demonstrated. The devices are fabricated using a technique that aligns the contact metallization with the Nb-doped WS2 contacts using a selective oxidation process. Devices with source/drain spacing of 0.15 um have on-state current of 103 uA/um at VDS = -1 V at a channel carrier concentration of ~ 7.5 x 1012 cm-2. The results provide a promising CMOS-compatible pathway to create low-resistance contacts to 2D-channel transistors.

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