2023/12/08 by Jingxu Xie, Zuocheng Zhang, Xie, Jingxu +29
Engineering · Materials Science · #2D Materials and Applications #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Machine Learning in Materials Science #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.2312.04849
openalex publication_date 2023/12/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30
Advanced microelectronics in the future may require semiconducting channel materials beyond silicon. Two-dimensional (2D) semiconductors, characterized by their atomically thin thickness, hold immense promise for high-performance electronic devices at the nanometer scale with lower heat dissipation. One challenge for achieving high-performance 2D semiconductor field effect transistors (FET), especially for p-type materials, is the high electrical contact resistance present at the metal-semiconductor interface. In conventional bulk semiconductors, low resistance ohmic contact is realized through heavy substitutional doping with acceptor or donor impurities at the contact region. The strategy of substitutional doping, however, does not work for p-type 2D semiconductors such as monolayer tungsten diselenide (WSe2).In this study, we developed highly efficient charge-transfer doping with WSe2/α-RuCl3 heterostructures to achieve low-resistance ohmic contact for p-type WSe2 transistors. We show that a hole doping as high as 3×1013 cm-2 can be achieved in the WSe2/α-RuCl3 heterostructure due to its type-III band alignment. It results in an Ohmic contact with resistance lower than 4 k Ohm μm at the p-type monolayer WSe2/metal junction. at room temperature. Using this low-resistance contact, we demonstrate high-performance p-type WSe2 transistors with a saturation current of 35 μA⋅ μm-1 and an ION/IOFF ratio exceeding 109 It could enable future microelectronic devices based on 2D semiconductors and contribute to the extension of Moore's law.