2015/03/31 by Shuigang Xu, Zefei Wu, Huanhuan Lu +14
Materials Science · Physics and Astronomy · #2D Materials and Applications #Boron nitride #Contact resistance #Electrical contacts #Electron mobility #Etching (microfabrication) #Graphene research and applications #Ohmic contact #Transition Metal Oxide Nanomaterials #Transition metal #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1088/2053-1583/3/2/021007
published as 2D Materials, 3, 021007 (2016) · The methods have been applied to p-type WSe2 and other TMDC based devices. Supplementary information is included
openalex publication_date 2016/04/21 · arxiv created 2016/04/22 · arxiv updated 2016/04/25 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/06
Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method to establish low-temperature Ohmic contacts in boron nitride encapsulated TMDC devices based on selective etching and conventional electron-beam evaporation of metal electrodes. This method works for most extensively studied TMDCs in recent years, including MoS 2 , MoSe 2 , WSe 2 , WS 2 , and 2H-MoTe 2 . Low electrical contact resistance is achieved at 2 K. All of the few-layer TMDC devices studied show excellent performance with remarkably improved field-effect mobilities ranging from 2300 to 16 000 cm 2 V −1 s −1 , as verified by the high carrier mobilities extracted from Hall effect measurements. Moreover, both high-mobility n-type and p-type TMDC channels can be realized by simply using appropriate contact metals. Prominent Shubnikov–de Haas oscillations have been observed and investigated in these high-quality TMDC devices.