2014/11/30 by V. Tayari, N. Hemsworth, I. Fakih +10 · 191 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Black phosphorus #Composite material #Condensed matter physics #Graphene #Graphene research and applications #Graphite #Layer (electronics) #Materials science #Metal #Nanotechnology #Optics #Optoelectronics #Physics #Quantum dot #Quantum well #Semiconductor #Topological Materials and Phenomena #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.1038/ncomms8702
published in Nature Communications 6(1), 7702 (Nature Portfolio) · 7 pages, 8 figures
arxiv created 2014/11/30 · openalex publication_date 2015/07/07 · arxiv updated 2015/09/04 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/06
Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated to atomic layer thickness. Unlike metallic graphite and semi-metallic graphene, bP is a semiconductor in both bulk and few-layer form. Here we fabricate bP-naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from 6±1 nm to 47±1 nm. Using a polymer encapsulant, we suppress bP oxidation and observe field effect mobilities up to 900 cm(2) V(-1) s(-1) and on/off current ratios exceeding 10(5). Shubnikov-de Haas oscillations observed in magnetic fields up to 35 T reveal a 2D hole gas with Schrödinger fermion character in a surface accumulation layer. Our work demonstrates that 2D electronic structure and 2D atomic structure are independent. 2D carrier confinement can be achieved without approaching atomic layer thickness, advantageous for materials that become increasingly reactive in the few-layer limit such as bP.