Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction

2014/03/31 by Marco M. Furchi, Andreas Pospischil, Florian Libisch +2 · 4 citations
Materials Science · Physics and Astronomy · #2D Materials and Applications #Diode #Graphene research and applications #Heterojunction #Photovoltaic effect #Photovoltaic system #Semiconductor #Stacking #Topological Materials and Phenomena #Tungsten diselenide #cond-mat.mes-hall #van der Waals force

paper · pdf · doi:10.1021/nl501962c

26 pages, 14 figures, Nano Letters 2014

openalex publication_date 2014/07/24 · arxiv created 2014/07/26 · arxiv updated 2014/07/29 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

Semiconductor heterostructures form the cornerstone of many electronic and optoelectronic devices and are traditionally fabricated using epitaxial growth techniques. More recently, heterostructures have also been obtained by vertical stacking of two-dimensional crystals, such as graphene and related two-dimensional materials. These layered designer materials are held together by van der Waals forces and contain atomically sharp interfaces. Here, we report on a type-II van der Waals heterojunction made of molybdenum disulfide and tungsten diselenide monolayers. The junction is electrically tunable, and under appropriate gate bias an atomically thin diode is realized. Upon optical illumination, charge transfer occurs across the planar interface and the device exhibits a photovoltaic effect. Advances in large-scale production of two-dimensional crystals could thus lead to a new photovoltaic solar technology.

Citations

• High-mobility field-effect transistors based on transition metal dichalcogenides
• Single-layer MoS2 transistors
• Electric Field Effect in Atomically Thin Carbon Films
• High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• A New Silicon p-n Junction Photocell for Converting Solar Radiation into Electrical Power
• Roll-to-roll production of 30-inch graphene films for transparent electrodes
• Charge Density Dependent Nongeminate Recombination in Organic Bulk Heterojunction Solar Cells
• Two-dimensional atomic crystals

Cited by

• Direct Observation of the Band Gap Transition in Atomically Thin ReS2
• Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states
• Charge Versus Energy Transfer in Atomically Thin Graphene-Transition Metal Dichalcogenide van der Waals Heterostructures
• Recent Advances in Two-Dimensional Materials beyond Graphene