Interrelation of structural and electronic properties inInxGa1−xN∕GaNquantum dots using an eight-bandk∙pmodel

2006/10/17 by Momme Winkelnkemper, M. Winkelnkemper, A. Schliwa +3 · 3 citations
Chemistry · Materials Science · Physics and Astronomy · #Chemistry #Condensed matter physics #Crystallography #Exciton #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials science #Physics #Quantum mechanics #Semiconductor Quantum Structures and Devices #Wurtzite crystal structure #cond-mat.mtrl-sci

paper · pdf · doi:10.1103/physrevb.74.155322

published as Phys. Rev B 74, 155322 (2006)

arxiv created 2006/10/17 · openalex publication_date 2006/10/26 · arxiv updated 2009/12/01 · openalex created_date 2016/06/24 · openalex updated_date 2026/08/05

Abstract

We present an eight-band k∙p-model for the calculation of the electronic structure of wurtzite semiconductor quantum dots (QDs) and its application to indium gallium nitride (In_xGa_1\ensuremath-xN) QDs formed by composition fluctuations in In_xGa_1\ensuremath-xN layers. The eight-band k∙p-model accounts for strain effects, piezoelectricity and pyroelectricity, and spin-orbit and crystal-field splitting. Exciton binding energies are calculated using the self-consistent Hartree method. Using this model, we studied the electronic properties of In_xGa_1\ensuremath-xN QDs and their dependence on structural properties, i.e., their chemical composition, height, and lateral diameter. We found a dominant influence of the built-in piezoelectric and pyroelectric fields, causing a spatial separation of the bound electron and hole states and a redshift of the exciton transition energies. The single-particle energies as well as the exciton energies depend heavily on the composition and geometry of the QDs.

Citations

• First-principles calculation of the piezoelectric tensor d⇊ of III–V nitrides
• Multi-excitonic complexes in single InGaN quantum dots
• Polarization fields in nitride nanostructures: 10 points to think about

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