2017/02/28 by Johannes Aberl, Petr Klenovský, Johannes S. Wildmann +8 · 25 citations
Materials Science · Physics and Astronomy · #Acoustics #Condensed matter physics #Dipole #Discrete dipole approximation #Exciton #GaN-based semiconductor devices and materials #Inversion (geology) #Nonlinear system #Physics #Piezoelectricity #Quantum Dots Synthesis And Properties #Quantum dot #Quantum mechanics #Semiconductor #Semiconductor Quantum Structures and Devices #Wave function #cond-mat.mes-hall
paper · pdf · doi:10.1103/physrevb.96.045414
published in Physical review. B./Physical review. B 96(4) (American Physical Society) · 6 pages, 4 figures
openalex created_date 2017/03/16 · openalex publication_date 2017/07/13 · arxiv created 2017/08/07 · arxiv updated 2017/08/08 · openalex updated_date 2026/08/05
Piezoelectric effects can strongly affect the position and shape of the electron and hole wave functions in compound semiconductors quantum dots (QDs). From the point of view of theoretical semiconductor physics, this is a well-documented notion. From an experimental point of view, however, the extreme sensitivity of the electronic properties of QDs to tiny variations of their shape, size, and composition makes it very challenging to single out the effect of piezoelectricity, which is often neglected in the analysis of experimental data. Here, the authors demonstrate that externally induced piezoelectric fields can be used for wave function engineering and to even force an inversion of the exciton built-in dipole moment in the very same QD. Detailed calculations based on k.p theory disclose that the inversion of the exciton dipole is driven by the nonlinear terms of the piezoelectric fields. These findings shine new light on the role and the possible exploitation of piezoelectric effects in semiconductor QDs.