Polarization fields in nitride nanostructures: 10 points to think about

1999/08/04 by Fabio Bernardini, Vincenzo Fiorentini · 1 citation
Engineering · Physics and Astronomy · #GaN-based semiconductor devices and materials #Metal and Thin Film Mechanics #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci

paper · pdf · doi:10.1016/s0169-4332(00)00434-7

RevTeX 5 pages, 2 embedded figures

arxiv created 1999/08/04 · openalex publication_date 2000/10/01 · arxiv updated 2009/11/30 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

Macroscopic polarization, both of intrinsic and piezoelectric nature, is unusually strong in III-V nitrides, and the built in electric fields in the layers of nitride-based nanostructures, stemming from polarization changes at heterointerfaces, have a major impact on the properties of single and multiple quantum wells, high mobility transistors, and thin films. The concepts involved in the theory and applications of polarization in nitrides have encountered some resistance in the field. Here we discuss critically ten ``propositions'' aimed at clarifying the main controversial issues.

Citations

• Macroscopic polarization and band offsets at nitride heterojunctions
• Spontaneous polarization and piezoelectric constants of III-V nitrides
• Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

Cited by

• Interrelation of structural and electronic properties inInxGa1−xN∕GaNquantum dots using an eight-bandk∙pmodel