2008/03/31 by R. Bardoux, Richard Bardoux, T. Guillet +10
Materials Science · Physics and Astronomy · #Anisotropy #Condensed matter physics #Emission spectrum #Epitaxy #Fine structure #Ga2O3 and related materials #GaN-based semiconductor devices and materials #Materials science #Molecular beam epitaxy #Molecular physics #Nanotechnology #Nuclear magnetic resonance #Optics #Optoelectronics #Physics #Polarization (electrochemistry) #Quantum dot #Quantum mechanics #Semiconductor Quantum Structures and Devices #Single crystal #Spectral line #Spectroscopy #cond-mat.other
paper · pdf · doi:10.1103/physrevb.77.235315
published as Physical Review B 77 (2008) 235315
openalex publication_date 2008/06/20 · arxiv created 2008/07/07 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
We report microphotoluminescence studies of single GaN/AlN quantum dots grown along the (0001) crystal axis by molecular-beam epitaxy on Si(111) substrates. The emission lines exhibit a linear polarization along the growth plane but with varying magnitudes of the polarization degree and with principal polarization axes that do not necessarily correspond to crystallographic directions. Moreover, we could not observe any splitting of polarized emission lines, at least within the spectral resolution of our setup (1 meV). We propose a model based on the joint effects of electron-hole exchange interaction and in-plane anisotropy of strain and/or quantum dot shape in order to explain the quantitative differences between our observations and those previously reported on, e.g., CdTe- or InAs-based quantum dots.