Polarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots

2007/05/24 by M. Winkelnkemper, R. Seguin, Sven Rodt +7 · 5 citations
Engineering · Physics and Astronomy · #Acoustic Wave Resonator Technologies #GaN-based semiconductor devices and materials #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci

paper · pdf · doi:10.1063/1.2743893

published as J. Appl. Phys. 101, 113708 (2007) · accepted at Journal of Applied Physics

arxiv created 2007/05/24 · openalex publication_date 2007/06/01 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [112¯0] and [1¯100]. Realistic eight-band k⋅p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole states which are formed either by the A or the B valence band.

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• Polarized emission from GaN/AlN quantum dots: Single-dot spectroscopy and symmetry-based theory

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