2007/08/03 by Ming Gong, Gong, Ming, Chuan-Feng Li +24
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Quantum Dots Synthesis And Properties #Semiconductor Quantum Structures and Devices #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0708.0468
7 pages, 3 figures
openalex publication_date 2007/08/03 · arxiv created 2007/08/15 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Excitonic polaron is directly demonstrated for the first time in InAs/GaAs quantum dots with photoluminescence method. A new peak (s') below the ground state of exciton (s) comes out as the temperature varies from 4.2 K to 285 K, and a huge anticrossing energy of 31 meV between s' and s is observed at 225 K, which can only be explained by the formation of excitonic polaron. The results also provide a strong evidence for the invalidity of Huang-Rhys formulism in dealing with carrier-longitudinal optical phonon interaction in quantum dot. Instead, we propose a simple two-band model, and it fits the experimental data quite well. The reason for the finding of the anticrossing is also discussed.