2013/08/31 by Lei Zhang, Chu-Hsiang Teng, Tyler A. Hill +5
Engineering · Physics and Astronomy · #Condensed matter physics #Exciton #Fluorescence #GaN-based semiconductor devices and materials #Laser #Materials science #Nanosecond #Optics #Optoelectronics #Photoluminescence #Photon #Physics #Quantum dot #Quantum dot laser #Quantum point contact #Quantum well #Quantum yield #Semiconductor #Semiconductor Quantum Structures and Devices #Semiconductor laser theory #Semiconductor materials and devices #cond-mat.mes-hall #physics.optics #quant-ph
paper · pdf · doi:10.1063/1.4830000
published as Applied Physics Letters, 103, 192114 (2013) · 6 pages, 4 figures, 1 table
openalex publication_date 2013/11/04 · arxiv created 2013/11/08 · arxiv updated 2015/06/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10 K.